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Multiband Plasma-Process Monitor Model C7460
The Multiband Plasma-Process Monitor (MPM) is a system specifically designed for monitoring the optical plasma emissions that are created during the various manufacturing processes of semiconductors including etching, sputtering, cleaning, and CVD. The MPM can handle multi-channel recording in real-time.
q Simultaneous measurement from 200 to 950 nm q Easy measurement using optical fiber input q High levels of accuracy and reliability q Software for measurement, analysis and factory integration
Real-Time Plasma Monitoring
BACKGROUND
Up to 60 percent of the time that a piece of semiconductor manufacturing equipment spends in operation is generally for non productive jobs like plasma cleanup, chamber stabilization (seasoning) and system diagnosis. Typical approaches for reducing down-time and repetitive processes like these are to utilize Advanced Process Control (APC) and Sensor Based Process Control (SBPC) technologies with factory LAN services. The MPM allows you to gain full control over processes using information provided by the MPM regarding plasma spectra, etching end-point detection status, plasma fault status, etc. The MPM opens the possibility of significantly increasing the efficiency of manufacturing equipment.
G TCHIN E ASMA PL G TERIN SPUT
CONFIGURATION OF APC WITH MPM (EXAMPLE)
FEATURES
q Highly Accurate and Reliable The MPM employs a high-resolution compact spectrograph and a highly sensitive detector which diagnose plasma with elevated levels of precision. Along with these superior photometric characteristics, the MPM is compact, sturdy and offers the high standards of reliability that are required in a manufacturing environment. q Easy to Operate The MPM is equipped with a sturdy fiber optic bundle, which can conveniently be combined with the plasma chamber. Due to this, and due to its easy-to use software, the MPM is easy to setup and operate. q Intelligent Sensor System The MPM is not just a spectrograph. It also contains internal data processing capabilities which allow to extract and compress the relevant infomation from the data. q Easy Fab Integration The MPM is equipped with several interfaces including Ethernet and a TCP/IP protocol stack. Together with its very verstile software framework this allows the easy integration into existing fab IT infrastructure.
Ethernet
HUB
Ethernet
Optical fiber
MPM
C7460
1 2 3 4 5
POWER
RS-232C 1 2
Ethernet
C7460
1
2
3
4
5
POWER
RS-232C 1 2
C7460
1
2
3
4
5
POWER
RS-232C 1 2
C7460
1
2
3
4
5
POWER
RS-232C 1 2
Script output (end point, plasma fault status, etc)
STANDARD CONFIGURATION
MPM Standard Configuration
C7460
1
2
3
4
5
POWER
Ethernet (TCP/IP)
RS-232C 1 2
Fiber input optics
Main unit
Computer
U9046 Plasma Process Data Aquisition Software Windows 98, NT, 2000
2
Simultaneous Measurement
from 200 nm to 950nm
BENEFITS (EXAMPLES)
q Easy Plasma Status Settings Real-time monitoring of the plasma process supports easy to make settings for the volume of introduced gas and plasma power. Product yield is increased through improved processing stability, and the early discovery of abnormalities. q Advanced Endpoint Detection Powerful scripts can be defined as recipes for each endpoint detection. It is possible to use the information in the whole spectrum by means of the unique spectral patterns method. This allows for advanced endpoint control with unprecedented specificity and precision. q Higher Efficiency through Automatic Cleaning Control Particularly with CVD, in which the chamber must be cleaned each time a wafer is processed, cleaning time has a major effect on actual operating efficiency. The automatic control features greatly improved throughput, increased productivity, and reduced costs. q Monitoring of Impurities and Abnormal Discharges Monitoring of the emission band, which does not occur in normal processes, provides warning of impurities and abnormal discharges before they occur, and thus improves yield.
A CVD M PLAS G EANIN CL
APPLICATIONS OVERVIEW
Due to the high versatility of the hardware and the software framework, the MPM is suitable for various different applications, without any compromise in performance or convenience. These applications can be grouped into the following categories: q Engineering Tasks Such as process optimization, comparison and matching; trouble-shooting; etc. q Endpoint Control Advanced, highly specific and sensitive end point control. q Fault Detection Highly selective automatic fault detection. q APC Sensor Automatic extraction of highly specific APC key numbers. (Under development)
SYSTEM STRUCTURE
Network
v 3-d display of plasma emission of CVD Cleaning (CF O2, Ar) of SiN 4,
Driver Software control process data U9046 Plasma Process Data Acquisition Software control spectrum data
Plasma equipment Plasma Emission
EPD signal
MPM(C7460) (Hardware)
formula for end-point detection Standard
Database spectrum data with process data
U8851 End-point Synthesis Tool
Optional
3
Easy Measurement using Optical Fiber
FUNCTIONS OF HARDWARE
q Measurement Parameter Setting
* Measurement interval * Exposure time: 20 to 32767 ms * Data accumulation: 1 to 32767 spectra * Sensor sensitivity: 3 settings (1x, 2x, 5x) * Wavelength smoothing: on/off * Width for wavelength smoothing: any integer value within 1 to 50 nm * Time smoothing (rolling average): on/off * Filter for time smoothing: any value within 0 to 100 % * Trigger : measurement start trigger
q Measurement Script
Scripts contain measurement conditions as well as formula and judgments applied to the data. Results of script processing can be output via the software and via the analog BNC terminal in realtime. Each etch process will be treated by a tailored script. The maximum number of scripts the MPM can store internally is 100, and one of them is selected as the active one. Each script can contain the definition of up to 32 formulas. All script processing is perfomed inside the MPM and in real-time.
SPECIFICATIONS
Bundle diameter inner: 1 mm; outer: 7 mm Fiber aperture (N.A.) 0.2 Bundle length 3 m 200 to 950 nm (Measuring range) Wavelength range 235 to 950 nm (Sensitivity-corrected range) < 2 nm Wavelength resolution A/D resolution 16 bit Analog signal output result 2 outputs BNC; 0 to 10 V of formula calculation Script output result of 5 outputs (3 outputs for External Trigger) judgment calculation BNC; TTL; High impedance BNC; TTL; High impedance Busy output BNC; TTL; High impedance; pulse width: min. 40 ms Start input IEEE 802.3 (10BaseT); 10 Mbit/s Ethernet Interfaces RJ45 modular connector RS-232 Serial Interface protocol TCP/IP (for Ethernet only) Line voltage AC 100 / 117 / 220 / 240 V 10%; 50 / 60 Hz 90 VA Power consumption Fiber input optics
q Script Formula
Script fomula can be defined to perform math operations between spectral intensities. Besides the four basic algebraic functions, it is also possible to compute smoothing, differentials as well as the special spectral patterns applied for endpoint and fault detection (see section on U8851 in this brochure).
q Judgments
Judgments are used to detect endpoint or fault conditions. They are defined by thresholds applied to formula, and they can be chained and combined by logical operators.
DIMENSIONAL OUTLINE (Unit: mm)
q Main Unit (weight: approx.7kg)
C7460
q Fiber Input Optics (weight: approx.100g)
3000 40 50
1
2
3
4
5
POWER
RS-232C 1 2
98.51
2001 2621
61
30.5 251
3251 3831
0.95
7 Input side
To main unit
4
Plasma Process Data Acquisition Software Standard Software
U9046
SOFTWARE ARCHITECTURE
Drivers Watchdog Logging
Standard Software
Communication Layer
Control Station Database
MPM C7460
U9046 consists of several software components to perform the measurement in real time with great flexibility.
OUTLINE
The U9046 is a software which allows to control up to 4 units of C7460 multiband plasma process monitor simultaneously and observe the spectrum of plasma emission during plasma processes. The observed spectrum data are stored in the database automatically and can be analyzed. The highly sensitive end-point detection software U8851 is an option. And also the fault detection software for Advanced Process Control will be available.
q Control Station
Control Station allows to control C7460s and observe the spectrum data. The measurement can be triggered by the trigger signal from the plasma chamber and also by the optical trigger. The measurement can be repeated automatically during the several wafers' process.
q Database
The spectrum data observed by the Control Station are stored into the SQL compatible Database.
q Watchdog
The Watchdog software component always monitors the condition of the software, and an error will be reported by an e-mail.
FEATURES
q Up to 4 units of C7460 can be controlled simultaneously, and all of the spectrum data during plasma process can be observed. q Database oriented data storage is available and a fast SQL based data access is allowed. q The various ways to trigger the measurement are prepared. q The drivers to communicate to the plasma chambers or factory network can be optionally provided.
q Logging
The Logging component records the history of the software jobs in a file.
q Drivers for the Plasma Chambers
The Drivers software can be provided to make communication to the plasma chambers or factory network. The Drivers can obtain the information about the process like Process ID and Lot No. and so on. Such information can be stored with the observed spectrum data into the Database. Such a driver is needed typically for endpoint and automatic fault detection installations.
q Easy Graphical User Interfaces
The graphical user interfaces (GUIs) used by the process engineer and by the operators are different and dedicated to their respective tasks. Specifically, the operators' GUI is very easy to use, minimizing the risk of human errors.
5
End-point Synthesis Tool U8851
Optional Software
FEATURES
q End-point detection in small aperture process q Simultaneous analysis of several wafers q Stability evaluation of a process
OPERATIONAL OUTLINE
Fig. 2 Analysis pattern
q Measurement data D (,t)
D (l, t) = Average spectrum + S1 (l) x T1 (t) + S2 (l)x T2 (t) + S3 (l) x T3 (t)
OUTLINE
The U8851 is an optional software application that is utilized with the Multiband Plasma-Process Monitor C7460 for endpoint detection in plasma etching. With the U8851, highly sensitive end-point detection of the conventionally difficult small aperture process has been made possible. In addition, since the process data of several wafers can be analyzed simultaneously, the reliability of the operation formula that performs an end-point detection is improved, the verification of an end-point detection is performed easily, and the stability evaluation of a process can be performed as well.
S1 ()
T1 (t)
COMPARISON
Conventional method
S2 ()
T2 (t)
U8851
S3 ()
T3 (t)
End point
Fig. 1 Comparison of U8851 with conventional method An example of an end-point detection of oxidization film etching (1% or less of aperture ratio) is shown in Fig. 1. Although it was difficult to detect the end-point of a process from the time changes in spectrum intensity by using the conventional method, detection with sufficient accuracy is possible with the U8851.
6
End-point Synthesis Tool U8851
Optional Software
1The data recorded by the Multiband Plasma-Process Monitor C7460 of the changes in the passage of time of the spectrum is loaded onto the End-point Synthesis Tool U8851. 2With the analysis function of the U8851, the spectrum data, which constantly changes, analyzes what kinds of spectrum patterns are shown by addition, and how each spectrum pattern is carrying out time changes. In Fig. 1 the measured data D (l, t) shows that three spectrum patterns (S1 [l] to S3 [l]) are mainly shown with the superposition of data which carried out time changes like T1 (t) to T3 (t), respectively focusing on the average spectrum. 3The U8851 can perform end-point detection of a process from spectrum pattern changes obtained in the analysis of 2 with changes in the passage of time. It specifies which spectrum pattern can be utilized for end-point detection with changes in the passage of time and smoothes and differentiates waveforms according to changes in the passage of time to detect an end-point. Moreover, analysis of 2 and 3 can be simultaneously performed on two or more wafers, and the detected end-point time is displayed on a graph. While verifying an end-point detection with these functions, the stability of a process can also be evaluated. (Fig.3) 4The detection operation formula of the acquired end points as mentioned above, can be saved in a file and downloaded into the C7460 as well. In the C7460, end-point detection like in 3 is performed in real time.
Fig. 3 Example of an analysis display
(a)
(b)
(c) (a) : An operation formula is set up. (b) : An operation result is displayed. (c) : Graph of wafer number pair terminal point time is displayed.
Optical Attenuator C8066
Optional Hardware
OUTLINE
The C8066 is an optical attenuator for the Multiband PlasmaProcess Monitor C7460. It is possible to change the light intensity in five steps (1, 1/10, 1/100, 1/1000, 1/10000) by the button on the front panel or via RS-232C interface. The optimum light intensity for monitoring the plasma emission can thus be obtained.
7
Optical Attenuator C8066
Optional Hardware
SPECIFICATIONS
Functions/ Attenuated ratio Performance Wavelength region Operation Filter changing time Baud rate RS-232C Data bit Parity Stop bit Connector Line voltage Other Power comsumption Conformity specification
FEATURES
q Light Intensity Change in Five Steps
With attenuated filter, the light intensity can be changed in five steps (1 to 1/10000).
1, 1/10, 1/100, 1/1000, 1/10000 200nm to 1000nm
Remote operation /Local operation
q High-speed and Highly Precise Changing
The stepping motor is adopted and a high-speed and highly precise filter change of 0.2 s / step is possible.
q Easy Operation
The filter can be easily changed via a button on the front panel, or via RS-232C interface.
0.2sec/STEP 38400bps 8bit None 1bit
D-sub 9pin
q Wide Wavelength Region
The wide wavelength region from ultraviolet to near-infrared (200 to 1000nm) is covered.
SYSTEM CONFIGURATION
C8066 Standard Configuration Main unit Fiber input optics
OPTICAL ATTENUATOR ATTENUATOR CONTROL
OD2 OD0 OD1 OD3 OD4
Ambient operation temperature Ambient strage temperature
AC100 to 120V / 220 to 240V , 50/60Hz 50VA max EMC EN55011:1991 Group1,ClassA EN50082-2:1995 Safety EN61010-1:1993+A.2:1995 0 to + 40C +10 to + 50C
Source light
C8066
Fiber input optics (Including C7460)
POWER
MPM C7460
C7460
1 2 3 4 5
Computer
LOCAL
POWER RS-232C
1
2
RS-232C
RS-232C
DIMENSIONAL OUTLINE (Unit: mm)
q Main Unit (weight: approx.3.0kg)
OPTICAL ATTENUATOR
q Fiber Input Optics (weight: approx.100g)
3000 40 50
C8066
OD0
OD1
OD2
OD3
OD4
LOCAL
98.5 1
ATTENUATOR CONTROL
POWER RS-232C
7 Input
to Main unit
0.95
6 1
170 1 232 1 3 0.5 175 1 25 1 233 1
ISO 9001 Certificate: 09 105 79045
5 Windows is a trademark of Microsoft Corporation in the U.S.A. 5 Product and software package names noted in this documentation are trademarks or registered trademarks of their respective manufacturers.
q q
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office. . Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications and external appearance are subject to change without notice. .
(c) 2002 Hamamatsu Photonics K.K.
Homepage Address http://www.hamamatsu.com
HAMAMATSU PHOTONICS K.K., Systems Division 812 Joko-cho, Hamamatsu City, 431-3196, Japan, Telephone: (81)53-431-0124, Fax: (81)53-435-1574, E-mail:export@sys.hpk.co.jp
U.S.A. and Canada: Hamamatsu Photonic Systems: 360 Foothill Road, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1)908-231-1116, Fax: (1)908-231-0852, E-mail: usa@hamamatsu.com Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658, E-mail: info@hamamatsu.de , France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10, E-mail: infos@hamamatsu.fr United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire, AL7 1BW, U.K., Telephone: (44) 1707-294888, Fax: (44) 1707-325777, E-mail: info@hamamatsu.co.uk North Europe: Hamamatsu Photonics Norden AB: Smidesvagen 12, SE-171-41 Solna, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01, E-mail: info@hamamatsu.se Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Mois, 1/E 20020 Arese (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741, E-mail: info@hamamatsu.it Cat. No. SSIS1027E04
AUG/2002 HPK Created in Japan (PDF)

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